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2N7002T

N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω

Manufacturer:

onsemi
Mfr.Part #:

2N7002T
Datasheet:

2N7002T Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for 2N7002T

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

2N7002T General Description

N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω

Key Features

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
RoHS Compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	2N7002T	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	41 Weeks
Configuration	SINGLE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.115 A	Drain-source On Resistance-Max	2 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	7 pF
JESD-30 Code	R-PDSO-F3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.2 W
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	115 mA
Rds On - Drain-Source Resistance	7.5 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	200 mW	Channel Mode	Enhancement
Series	2N7002T	Height	0.78 mm
Length	1.6 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	12.5 ns	Typical Turn-On Delay Time	5.85 ns
Width	0.88 mm	Unit Weight	0.000071 oz