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2SC5200

NPN Epitaxial Silicon Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

2SC5200 General Description

Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-264

Key Features

  • High Current Capability: IC = 15 A
  • High Power Dissipation : 150 watts
  • High Frequency : 30 MHz
  • High Voltage : VCEO = 250 V
  • Wide S.O.A for reliable operation
  • Excellent Gain Linearity for low THD
  • Complement to 2SA1943 / FJL4215
  • Thermal and electrical Spice models are available

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 230 V Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 30 A Pd - Power Dissipation 150 W
Gain Bandwidth Product fT 30 MHz Maximum Operating Temperature + 150 C
Series 2SC5200 Continuous Collector Current 15 A
DC Collector/Base Gain hfe Min 35 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 25 Subcategory Transistors
Technology Si Unit Weight 0.352740 oz

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Availability: 5889 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.260 $1.26
10+ $1.171 $11.71
25+ $0.844 $21.10
100+ $0.789 $78.90
500+ $0.765 $382.50
1000+ $0.754 $754.00

The prices below are for reference only.

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