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See Technical Specifications

70T3519S133BCI +BOM

SRAM - Dual Port, Synchronous Memory IC 9Mbit Parallel 133 MHz 4.2 ns 256-CABGA (17x17)

Manufacturer:

Renesas Electronics Corporation
Mfr.Part #:

70T3519S133BCI
Datasheet:

70T3519S133BCI Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Dual Port, Synchronous
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70T3519S133BCI General Description

The 70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.

Key Features

Dual-Port allows simultaneous access of the same memory location
Selectable Pipelined or Flow-Through output mode
Counter enable and repeat features
Dual chip enables allow for depth expansion without additional logic
Full synchronous operation on both ports
Interrupt and Collision Detection Flags
Separate byte controls for multiplexed bus and bus matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output Mode
2.5V (±100mV) power supply for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port
Available in a 256-pin BGA, 208-pin PQFP and 208-pin fpBGA packages
Includes JTAG functionality on BGA package versions only
Industrial temperature range (-40C to +85C) is available

Specifications

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Technology	SRAM - Dual Port, Synchronous
Memory Size	9Mbit	Memory Organization	256K x 36
Memory Interface	Parallel	Clock Frequency	133 MHz
Access Time	4.2 ns	Voltage - Supply	2.4V ~ 2.6V
Operating Temperature	-40°C ~ 85°C (TA)	Mounting Type	Surface Mount
Base Product Number	70T3519