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71V2546S100PFG8

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

Manufacturer:

Renesas Electronics
Mfr.Part #:

71V2546S100PFG8
Datasheet:

71V2546S100PFG8 Datasheet (PDF)
Memory Size:

4 Mbit
Organization:

128 k x 36
Access Time:

5 ns
Maximum Clock Frequency:

100 MHz
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71V2546S100PFG8 General Description

The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Key Features

High performance system speed - 150 MHz (3.8 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read cycles
Internally synchronized output buffer enable eliminates the need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 - BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 2.5V I/O Supply (VDDQ)
Available in 100-pin TQFP and 119-pin BGA packages

Specifications

Product Category	SRAM	Memory Size	4 Mbit
Organization	128 k x 36	Access Time	5 ns
Maximum Clock Frequency	100 MHz	Interface Type	Parallel
Supply Voltage - Max	3.465 V	Supply Voltage - Min	3.135 V
Supply Current - Max	250 mA	Minimum Operating Temperature	0 C
Maximum Operating Temperature	+ 70 C	Mounting Style	SMD/SMT
Height	1.4 mm	Length	20 mm
Memory Type	SDR	Moisture Sensitive	Yes
Product Type	SRAM	Series	71V2546S100
Factory Pack Quantity	1000	Subcategory	Memory & Data Storage
Type	Synchronous	Width	14 mm
Part # Aliases	IDT71V2546S100PFG8 71V2546	Unit Weight	0.023175 oz