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APT40GF120JRD

IGBT Module Single 1200 V 60 A 390 W Chassis Mount SOT-227 (ISOTOP®)

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

APT40GF120JRD
Datasheet:

APT40GF120JRD Datasheet (PDF)
Configuration:

Single
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

60 A
Power - Max:

390 W
EDA/CAD Models:

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APT40GF120JRD General Description

IGBT products from Microchip provide high-quality solutions for awide range of high-voltage and high-power applications. The switching frequencyrange spans from DC for minimal conduction loss to 150 kHz forvery-high-power-density Switch Mode Power Supply (SMPS) applications. There are sixproduct series that utilize three different IGBT technologies:Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as aCombi product packaged with an anti-parallel DQ series diode.

The Ultra Fast NPT-IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.

Key Features

Microchip Technology, Inc Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	Series	-
IGBT Type	-	Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V	Current - Collector (Ic) (Max)	60 A
Power - Max	390 W	Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 50A
Current - Collector Cutoff (Max)	500 µA	Input Capacitance (Cies) @ Vce	3.45 nF @ 25 V
Input	Standard	NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Chassis Mount
Base Product Number	APT40	Product Type	Discrete IGBT
Power Dissipation (W) [max]	250 - 962	Collector Current (dc) (A) [max]	18 - 90