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ATF-53189 +BOM

N-Channel RF Small Signal FET

ATF-53189 General Description

DescriptionAgilent Technologies’s ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz.ATF-53189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested.Features• Single voltage operation• High Linearity and Gain• Low Noise Figure• Excellent uniformity in product specifications• SOT 89 standard package• Point MTTF> 300 years[2]• MSL-1 and lead-free• Tape-and-Reel packaging option availableSpecifications2 GHz, 4.0V, 135 mA (Typ.)• 40.0 dBm Output IP3• 23.0 dBm Output Power at 1dB gain compression• 0.85 dB Noise Figure• 15.5 dB Gain• 46% PAE at P1dB• LFOM[3] 12.7 dBApplications• Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure• Driver Amplifier for WLAN, WLL/RLL and MMDS applications• General purpose discrete E-pHEMT for other high linearity applications

Key Features

  • Single voltage operation
  • High Linearity and Gain
  • Low Noise Figure
  • Excellent uniformity in product specifcations
  • SOT 89 standard package
  • Point MTTF> 300 years[2]
  • MSL-1 and lead-free
  • Tape-and-Reel packaging option available

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Drain Current-Max (Abs) (ID) 0.3 A Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1 W Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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