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ATF-58143-TR1G +BOM

RF JFET Transistors Transistor GaAs Single Voltage

email Email: [email protected]
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ATF-58143-TR1G General Description

RF Mosfet 3 V 30 mA 2GHz 16.5dB 19dBm SOT-343

Key Features

  • Low noise and high linearity performance
  • Enhancement Mode Technology[1]
  • Excellent uniformity in product specifications
  • Low cost surface mount small plastic package SOT-343 (4 lead SC-70) in Tape-and-Reel packaging option available
  • Lead-free option available
  • Specifications
  • 2 GHz; 3V, 30 mA (Typ.)
  • 30.5 dBm output 3rd order intercept
  • 19 dBm output power at 1 dB
  • 0.5 dB noise figure
  • 16.5 dB associated gain

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.75
Case Connection SOURCE Configuration SINGLE
DS Breakdown Voltage-Min 5 V Drain Current-Max (ID) 0.1 A
FET Technology HIGH ELECTRON MOBILITY Highest Frequency Band C BAND
JESD-30 Code R-PDSO-G4 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 0.5 W
Power Gain-Min (Gp) 15 dB Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20 Transistor Application AMPLIFIER
Transistor Element Material SILICON

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