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BUK6D43-40PX

P-Channel 40 V 6A (Ta) 15W (Tc) Surface Mount DFN2020MD-6

BUK6D43-40PX General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Extended temperature range Tj = 175 ℃
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Trench MOSFET technology
  • AEC-Q101 qualified

Application

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

Specifications

Source Content uid BUK6D43-40PX Part Life Cycle Code Active
Pin Count 6 Reach Compliance Code compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 29.7 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.043 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 91 pF JESD-30 Code S-PDSO-N6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 56 A Reference Standard AEC-Q101; IEC-60134
Surface Mount YES Terminal Finish TIN
Terminal Form NO LEAD Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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