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CAS120M12BM2

Silicon Carbide N-channel Transistor with 1.2KV Voltage Rating, 193A Current Capacity, Packaged in a 7-Pin Box

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CAS120M12BM2 General Description

Mosfet Array 1200V (1.2kV) 193A (Tc) 925W Chassis Mount Module

cas120m12bm2 cas120m12bm2

Key Features

  • CAS120M12BM2 is a 120A, 1200V three-phase low inductance SiC power module
  • Includes six MOSFETs with parallel connected JBS diodes
  • Optimized for fast-switching applications
  • High-temperature soldering process for increased reliability
  • Integrated NTC thermistor for temperature monitoring
  • Designed for high efficiency and power density
cas120m12bm2

Application

  • Industrial automation
  • Robotics
  • Medical devices
  • Security systems
  • Consumer electronics
  • Agricultural equipment
  • Automotive industry
  • Aviation and aerospace
  • Military and defense
  • Telecommunications

Specifications

Product Category Discrete Semiconductor Modules REACH Details
Product Power MOSFET Modules Type Half-Bridge Module
Technology SiC Vr - Reverse Voltage 1.2 kV
Vgs - Gate-Source Voltage - 4 V, + 15 V Mounting Style Screw Mount
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 175 C
Configuration Half-Bridge Height 30 mm
Id - Continuous Drain Current 193 A Length 106.4 mm
Product Type Discrete Semiconductor Modules Rds On - Drain-Source Resistance 13 mOhms
Factory Pack Quantity 1 Subcategory Discrete Semiconductor Modules
Vds - Drain-Source Breakdown Voltage 1.2 kV Width 61.4 mm
Unit Weight 12.805624 oz

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Ratings and Reviews

More
K
K**e 07/10/2023

awesome LCD highly recommend!

2
H
H**e 03/21/2022

Delivered intact, working capacity did not check... The parcel arrived in 6.5 days...

8
I
I**c 01/25/2022

The product is fully consistent with the description. i checked several pieces. bright bright. i recommend.

8

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