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See Technical Specifications

DMN26D0UFB4-7

MOSFET, N-CH, 20V, 0.24A, X2-DFN1006; Available until stocks are exhausted

Manufacturer:

Diodes Incorporated
Mfr.Part #:

DMN26D0UFB4-7
Datasheet:

DMN26D0UFB4-7 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for DMN26D0UFB4-7

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

DMN26D0UFB4-7 General Description

Small Signal Field-Effect Transistor, 0.24A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, CASE DFN1006H4-3, 3 PIN

Key Features

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	0.24 A
Drain-source On Resistance-Max	3 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PBCC-N3	JESD-609 Code	e4
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.35 W
Qualification Status	Not Qualified	Reference Standard	AEC-Q101
Surface Mount	YES	Terminal Finish	NICKEL PALLADIUM GOLD
Terminal Form	NO LEAD	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON