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IHW30N120R3 +BOM

Trans IGBT Chip N-CH 1200V 60A 349W 3-Pin(3+Tab) TO-247 Tube

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Key Features

  • Powerful monolithic body diode with low forward voltage
  • designed for soft commutation only
  • TRENCHSTOP™ technology offering:
  • - very tight parameter distribution
  • - high ruggedness, temperature stable behavior
  • - low VCEsat
  • - easy parallel switching capability due to positive
  • temperature coefficient in VCEsat
  • Low EMI
  • Qualified according to JESD-022 for target applications
  • Pb-free lead plating; RoHS compliant
  • Halogen-free (according to IEC 61249-2-21)
  • Complete product spectrum and PSpice Models:
  • http://www.infineon.com/igbt/
Infineon Original Stock

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.55 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 349 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Series RC
Gate-Emitter Leakage Current 100 nA Product Type IGBT Transistors
Factory Pack Quantity 240 Subcategory IGBTs
Tradename TRENCHSTOP Part # Aliases SP000999768 IHW30N120R3FKSA1
Unit Weight 0.211644 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $5.174 $5.17
10+ $4.566 $45.66
30+ $4.206 $126.18
100+ $3.843 $384.30
500+ $3.673 $1,836.50
1000+ $3.596 $3,596.00

The prices below are for reference only.

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