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IRF520PbF

MOSFET 100V N-CH HEXFET

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IRF520PbF General Description

N-Channel 100 V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB

irf520pbf irf520pbf

Key Features

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
    • irf520pbf

    Specifications

    Product Category MOSFET REACH Details
    Technology Si Mounting Style Through Hole
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 9.2 A
    Rds On - Drain-Source Resistance 270 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 16 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
    Pd - Power Dissipation 60 W Channel Mode Enhancement
    Series IRF Configuration Single
    Fall Time 20 ns Product Type MOSFET
    Rise Time 30 ns Factory Pack Quantity 1000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 19 ns Typical Turn-On Delay Time 8.8 ns
    Part # Aliases IRF520PBF-BE3 Unit Weight 0.068784 oz

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    Ratings and Reviews

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    C
    C**s 01/02/2023

    Quality goods. Fast shipping. Very good service recommend!

    5
    E
    E**y 10/05/2022

    Good product, cheap price

    9
    K
    K**n 03/04/2022

    Received in perfect condition. All perfect and fast. I advise this seller, thank you.

    3
    S
    S**n 05/24/2021

    Not yet. I hope everyone will work. Come all whole, without damage. Thank you, i advise you.

    11

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