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IRF640N

N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-220AB

email Email: [email protected]
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tel Tel: +852 95804164

IRF640N General Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Specifications

Tj max 175.0 °C Mounting THT
Polarity N Ptot max 150.0 W
RthJC max 1.0 K/W VDS max 200.0 V
VGS max 20.0 V RDS (on) max 150.0 mΩ
VGS(th) max 4.0 V VGS(th) min 2.0 V
ID max 18.0 A Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Availability: 5722 PCS

+BOM
Qty. Unit Price Ext. Price
5+ $0.285 $1.42
50+ $0.232 $11.60
150+ $0.209 $31.35
500+ $0.180 $90.00
2000+ $0.167 $334.00
5000+ $0.159 $795.00

The prices below are for reference only.

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