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IS61LV25616AL-10T +BOM

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

IS61LV25616AL-10T General Description

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Key Features

  • High-speed access time:
  • — 10, 12 ns
  • CMOS low power operation
  • Low stand-by power:
  • — Less than 5 mA (typ.) CMOS stand-by
  • TTL compatible interface levels
  • Single 3.3V power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • Lead-free available

Specifications

Pbfree Code No Part Life Cycle Code Obsolete
Pin Count 44 Reach Compliance Code compliant
ECCN Code 3A991.B.2.A HTS Code 8542.32.00.41
Access Time-Max 10 ns I/O Type COMMON
JESD-30 Code R-PDSO-G44 JESD-609 Code e0
Length 18.415 mm Memory Density 4194304 bit
Memory IC Type STANDARD SRAM Memory Width 16
Moisture Sensitivity Level 3 Number of Functions 1
Number of Terminals 44 Number of Words 262144 words
Number of Words Code 256000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C Operating Temperature-Min
Organization 256KX16 Output Characteristics 3-STATE
Parallel/Serial PARALLEL Qualification Status Not Qualified
Seated Height-Max 1.2 mm Standby Current-Max 0.01 A
Standby Voltage-Min 2 V Supply Current-Max 0.1 mA
Supply Voltage-Max (Vsup) 3.63 V Supply Voltage-Min (Vsup) 3.135 V
Supply Voltage-Nom (Vsup) 3.3 V Surface Mount YES
Technology CMOS Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD Terminal Form GULL WING
Terminal Pitch 0.8 mm Terminal Position DUAL
Width 10.16 mm Product Category SRAM
Memory Size 4 Mbit Access Time 10 ns
Interface Type Parallel Supply Voltage - Max 3.6 V
Supply Voltage - Min 3.135 V Supply Current - Max 100 mA
Minimum Operating Temperature 0 C Maximum Operating Temperature + 70 C
Mounting Style SMD/SMT Data Rate SDR
Moisture Sensitive Yes Number of Ports 1
Product Type SRAM Factory Pack Quantity 135
Subcategory Memory & Data Storage Type Asynchronous

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