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See Technical Specifications

IXFH80N65X2

N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)

Manufacturer:

IXYS
Mfr.Part #:

IXFH80N65X2
Datasheet:

IXFH80N65X2 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
EDA/CAD Models:

Request Free CAD Models for IXFH80N65X2

Email: [email protected]

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Tel: +852 95804164

IXFH80N65X2 General Description

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness.In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).

Key Features

Ultra low on-resistance R
DS(ON)
and gate charge Q
g
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Advantages:
Higher efficiency
High power density
Easy to mount
Space savings

Application

Industrial switched-mode and resonantmode power supplies
Electric vehicle battery chargers
AC and DC motor drives
DC-DC converters
Renewable-energy inverters
Power Factor Correction (PFC) circuits
Robotics and servo control

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	3000 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	650 V
Drain Current-Max (ID)	80 A	Drain-source On Resistance-Max	0.038 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	1.6 pF
JEDEC-95 Code	TO-247AD	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	890 W	Pulsed Drain Current-Max (IDM)	160 A
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	10	Transistor Application	SWITCHING
Transistor Element Material	SILICON