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See Technical Specifications

M3008316045NX0ITBY

MRAM (Magnetoresistive RAM) Memory IC 8Mbit Parallel 45 ns 54-TSOP

Manufacturer:

Renesas Technology Corp
Mfr.Part #:

M3008316045NX0ITBY
Datasheet:

M3008316045NX0ITBY Datasheet (PDF)
Memory Type:

Non-Volatile
Memory Format:

RAM
Technology:

MRAM (Magnetoresistive RAM)
Memory Size:

8Mbit
EDA/CAD Models:

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M3008316045NX0ITBY General Description

The M3008316 is a high performance parallel interface non-volatile MRAM with 8Mbit density. It features SRAM compatible read and write access times of 35ns or 45ns. It operates from -40° to +85° (industrial version) and -40°C to +105°C (industrial plus version). The device is offered in 48-ball FBGA and 54-TSOP packages.

Key Features

Utilizing advanced pMTJ STT-MRAM technology
Parallel Asynchronous x16
8Mb density
Low active write and read current
Operating temperature: Industrial -40°C to +85°C, Industrial Plus -40°C to +105°C
Operating voltage: 2.70 V to 3.60V
Package: 54-pin TSOP and 48-pin FBGA

Specifications

Category	Integrated Circuits (ICs)MemoryMemory	Series	-
Memory Type	Non-Volatile	Memory Format	RAM
Technology	MRAM (Magnetoresistive RAM)	Memory Size	8Mbit
Memory Organization	512K x 16	Memory Interface	Parallel
Write Cycle Time - Word, Page	45ns	Access Time	45 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C
Mounting Type	Surface Mount	Product Category	MRAM
Product Type	MRAM	Factory Pack Quantity	96