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MBR8H100MFST1G

8 A, 100 V Schottky Diode in SO-8FL

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MBR8H100MFST1G General Description

8 A, 100 V Schottky Diode in SO-8FL

ON Semiconductor, LLC Inventory

Key Features

  • Low Power Loss / High Efficiency
  • New Package Provides Capability of Inspection and Probe AfterBoard Mounting
  • Guardring for Stress Protection
  • Low Forward Voltage Drop
  • 175°C Operating Junction Temperature
  • Wettable Flacks Option Available
  • NRVB Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable
  • These are Pb−Free Devices
ON Semiconductor, LLC Original Stock

Application

  • Automotive engine control modules
  • Automotive infotainment modules
  • Automotive LED headlighting
  • Compact notebook adapters
  • High frequency SMPS
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline 488AA
MSL Temp (°C) 260 Container Type REEL

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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MBR8H100MFST1G Datasheet PDF

Preliminary Specification MBR8H100MFST1G PDF Download

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