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MRF8S23120HR5

RF Mosfet 28 V 800 mA 2.3GHz 16dB 28W NI-780H-2L

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Tel: +852 95804164

RF Mosfet 28 V 800 mA 2.3GHz 16dB 28W NI-780H-2L

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)ηD(%)Output PAR(dB)ACPR(dBc)2300 MHz16.031.96.1–37.12350 MHz16.330.96.4–37.92400 MHz16.631.26.3–37.5
Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW Output Power (2 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parametersand Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

feature-packaging	Tape and Reel	feature-rad-hard
feature-pin-count	5	feature-cecc-qualified	No
feature-esd-protection		feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	No