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See Technical Specifications

PC28F00AG18FE

FLASH - NOR Memory IC 1Gbit Parallel 133 MHz 96 ns 64-EasyBGA (8x10)

Manufacturer:

MICRON TECHNOLOGY INC
Mfr.Part #:

PC28F00AG18FE
Datasheet:

PC28F00AG18FE Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for PC28F00AG18FE

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

PC28F00AG18FE General Description

FLASH - NOR Memory IC 1Gbit Parallel 133 MHz 96 ns 64-EasyBGA (8x10)

Key Features

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Access Time-Max	96 ns
Command User Interface	YES	Common Flash Interface	YES
Data Polling	NO	JESD-30 Code	R-PBGA-B64
JESD-609 Code	e1	Length	10 mm
Memory Density	1073741824 bit	Memory IC Type	FLASH
Memory Width	16	Number of Functions	1
Number of Sectors/Size	512	Number of Terminals	64
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX16
Parallel/Serial	PARALLEL	Power Supplies	1.8 V
Programming Voltage	2.7 V	Qualification Status	Not Qualified
Screening Level	AEC-Q100	Seated Height-Max	1.2 mm
Sector Size	128K	Standby Current-Max	0.000185 A
Supply Current-Max	0.05 mA	Supply Voltage-Max (Vsup)	2 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	TIN SILVER COPPER
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Toggle Bit	NO
Type	NOR TYPE	Width	8 mm