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RUM001L02T2CL

N-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount VMT3

RUM001L02T2CL General Description

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, VMT3, SC-105AA, 3 PIN

Application

SWITCHING

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.1 A Drain-source On Resistance-Max 4.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PDSO-F3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Surface Mount YES
Terminal Finish Tin (Sn) Terminal Form FLAT
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON

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Availability: 7226 PCS

+BOM
Qty. Unit Price Ext. Price
20+ $0.031 $0.62
200+ $0.024 $4.80
600+ $0.021 $12.60
2000+ $0.019 $38.00
8000+ $0.018 $144.00
16000+ $0.017 $272.00

The prices below are for reference only.