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SI2319CDS-T1-GE3
Field-Effect Transistor suitable for Small Signal Amplification with P-Channel Configuration
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Manufacturer:
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Mfr.Part #:
SI2319CDS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 5298 PCS
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SI2319CDS-T1-GE3 General Description
MOSFET,P CH,40V,4.4A,DIODE,SOT23; Transistor Polarity:P Channel; Drain Source Voltage Vds:-40V; On State Resistance:0.064ohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:-20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-3.1A; Power Dissipation:1.25W
Key Features
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
Application
SWITCHINGSpecifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 4.4 A | Rds On - Drain-Source Resistance | 77 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 21 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 8 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 9 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 8 ns |
Width | 1.6 mm | Part # Aliases | SI2319CDS-T1-BE3 SI2319CDS-GE3 |
Unit Weight | 0.000282 oz |
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Availability: 5298 PCS
+BOMQty. | Unit Price | Ext. Price |
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