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SI4825DDY-T1-GE3

Power MOSFET for 30V applications

Manufacturer:

Vishay
Mfr.Part #:

SI4825DDY-T1-GE3
Datasheet:

SI4825DDY-T1-GE3 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for SI4825DDY-T1-GE3

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SI4825DDY-T1-GE3 General Description

Small Signal Field-Effect Transistor, 10.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Key Features

- Enhancement channel mode
- Maximum operating temperature of +150°C (TJ)
- Operating temperature range of -55°C to +150°C (TJ)
- Maximum drain-source voltage of 30V
- Maximum gate-source voltage of 2.5V @ 250μA
- Maximum power dissipation of 2.7W
- Turn-on delay time of 13ns to 48ns
- Maximum drain current of 10.9A

Application

Load Switch |Notebook Adaptor Switch

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	14.9 A
Rds On - Drain-Source Resistance	12.5 mOhms	Vgs - Gate-Source Voltage	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage	1.4 V	Qg - Gate Charge	57 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	5 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI4
Configuration	Single	Fall Time	9 ns
Forward Transconductance - Min	28 S	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	13 ns
Part # Aliases	SI4825DDY-GE3	Unit Weight	0.026455 oz