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See Technical Specifications

SI7960DP-T1-E3 +BOM

TRANSISTORS SI7960DP-TRANSISTOR BJT-NPN

Manufacturer:

VISHAY
Mfr.Part #:

SI7960DP-T1-E3
Datasheet:

SI7960DP-T1-E3 Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain to Source Voltage (Vdss):

60V
EDA/CAD Models:

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SI7960DP-T1-E3 General Description

DUAL N CHANNEL MOSFET, 60V, SOIC; Transi; DUAL N CHANNEL MOSFET, 60V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.2A; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:0.017ohm; Rds(on) Test Voltage Vgs:20V

Key Features

High Efficiency
Small Size: 5 mm x 5 mm LFCSP
Low Noise: <0.5% TEC Current Ripple
Long-Term Temperature Stability: 0.01°C
Temperature Lock Indication
Temperature Monitoring Output
Oscillator Synchronization with an External Signal
Clock Phase Adjustment for Multiple Controllers
Programmable Switching Frequency up to 1 MHz
Thermistor Failure Alarm
Maximum TEC Voltage Programmability

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6.2A	Rds On (Max) @ Id, Vgs	21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-	Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount