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SIHH14N65E-T1-GE3

E Series Power MOSFET

SIHH14N65E-T1-GE3 General Description

N-Channel 650 V 15A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8

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Key Features

  • Completely lead (Pb)-free device
  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)
  • Kelvin connection for reduced gate noise
  • Vishay Original Stock

    Application

    • oServer and telecom power supplies
    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oInduction heating
    • oMotor drives
    • oBattery chargers
    • oRenewable energy
    • oSolar (PV inverters)
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
    Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 225 mOhms
    Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
    Qg - Gate Charge 48 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 156 W
    Channel Mode Enhancement Series E
    Configuration Single Fall Time 31 ns
    Height 1 mm Length 8 mm
    Product Type MOSFET Rise Time 30 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Typical Turn-Off Delay Time 53 ns Typical Turn-On Delay Time 22 ns
    Width 8 mm Unit Weight 0.001764 oz

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    Availability: 7072 PCS

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