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See Technical Specifications

SQ2360EES-T1-GE3

N-Channel 60 V 4.4A (Tc) Surface Mount SOT-23-3 (TO-236)

Manufacturer:

VISHAY
Mfr.Part #:

SQ2360EES-T1-GE3
Datasheet:

SQ2360EES-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

3
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

1.8 mJ
EDA/CAD Models:

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SQ2360EES-T1-GE3 General Description

Power Field-Effect Transistor, 2.3A I(D), 60V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Key Features

TrenchFET® Power MOSFET,AEC-Q101 Qualifiedc,100 % Rg and UIS Tested

Specifications

Part Life Cycle Code	Transferred	Pin Count	3
Reach Compliance Code		ECCN Code	EAR99
Avalanche Energy Rating (Eas)	1.8 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	2.3 A
Drain-source On Resistance-Max	0.066 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-236	JESD-30 Code	R-PDSO-G3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	30 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING	Transistor Element Material	SILICON