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STPSC2H12D

Power Schottky silicon carbide diode designed to handle high voltages up to 1200 V

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STPSC2H12D General Description

The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

stpsc2h12d

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • Low VF
  • ECOPACK®2 compliant

Specifications

ECCN US EAR99 ECCN EU NEC
Packing Type Tube Grade Industrial

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Ratings and Reviews

More
L
L**s 04/03/2023

Received in good condition, I will check and review

17
E
E**a 08/30/2021

Walked for a short time, in the work until i checked.

14

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