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TLC27M2AIDR

CMOS Amplifier 2 Circuit 8-SOIC

Manufacturer:

TI
Mfr.Part #:

TLC27M2AIDR
Datasheet:

TLC27M2AIDR Datasheet (PDF)
Package/Case:

8-SOIC
Product Type:

Precision Amplifiers
Lifecycle:

Active
EDA/CAD Models:

Request Free CAD Models for TLC27M2AIDR

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TLC27M2AIDR General Description

The TLC27M2 and TLC27M7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications which have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M2 (10 mV) to the high-precision TLC27M7 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M2 and TLC27M7. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.

The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up.

The TLC27M2 and TLC27M7 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.

Key Features

Trimmed Offset Voltage:
- TLC27M7.500 µV Max at 25°C,
  V_DD = 5 V
Input Offset Voltage Drift.Typically
0.1 µV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over
Specified Temperature Ranges:
- 0°C to 70°C.3 V to 16 V
- –40°C to 85°C.4 V to 16 V
- –55°C to 125°C.4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below
the Negative Rail (C-Suffix, I-Suffix Types)
Low Noise.Typically 32 nV/ Hz at f = 1 kHz
Low Power.Typically 2.1 mW at 25°C, V_DD = 5 V
Output Voltage Range Includes Negative Rail
High Input impedance.10¹² Typ
ESD-Protection Circuitry
Small-Outline Package Option Also Available in Tape and Reel
Designed-In Latch-Up Immunity