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See Technical Specifications

UCC21530DWK +BOM

Driver 6A 2-OUT High and Low Side Half Brdg 14-Pin SOIC Tube

Manufacturer:

Texas Instruments, Inc
Mfr.Part #:

UCC21530DWK
Datasheet:

UCC21530DWK Datasheet (PDF)
Number of channels:

2
Isolation rating:

Reinforced
Withstand isolation voltage (VISO) (Vrms):

5700
Working isolation voltage (VIOWM) (Vrms):

2121
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UCC21530DWK General Description

The UCC21530 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a 5.7-kV_RMS reinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850 V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

Key Features

Universal: dual low-side, dual high-side or half-bridge driver
Wide body SOIC-14 (DWK) package
3.3-mm spacing between driver channels
Switching parameters:
- 19-ns typical propagation delay
- 10-ns minimum pulse width
- 5-ns maximum delay matching
- 6-ns maximum pulse-width distortion
Common-mode transient immunity (CMTI) greater than 100-V/ns
Isolation barrier life >40 years
4-A peak source, 6-A peak sink output
TTL and CMOS compatible inputs
3-V to 18-V input VCCI range
Up to 25-V VDD output drive supply
Programmable overlap and dead time
Rejects input pulses and noise transients shorter than 5 ns
Operating temperature range –40 to +125°C
Safety-related certifications:
- 8000-V_PK isolation per DIN V VDE V 0884-11 :2017-01
- 5.7-kV_RMS isolation for 1 minute per UL 1577
- CSA certification per IEC 60950-1, IEC 62368-1, IEC 61010-1 and IEC 60601-1 end equipment standards
- CQC certification per GB4943.1-2011

Specifications

Number of channels	2	Isolation rating	Reinforced
Withstand isolation voltage (VISO) (Vrms)	5700	Working isolation voltage (VIOWM) (Vrms)	2121
Transient isolation voltage (VIOTM) (VPK)	8000	Power switch	IGBT, MOSFET, SiCFET
Peak output current (A)	6	Features	Enable, Programmable dead time
Output VCC/VDD (max) (V)	25	Output VCC/VDD (min) (V)	14.7
Input VCC (min) (V)	3	Input VCC (max) (V)	18
Propagation delay time (µs)	0.019	Input threshold	CMOS, TTL
Operating temperature range (°C)	-40 to 125	Rating	Catalog
Bus voltage (max) (V)	2121	Rise time (ns)	6
Fall time (ns)	7	Undervoltage lockout (typ) (V)	12
feature-driver-type	High and Low Side	feature-driver-configuration
feature-bridge-type	Half Bridge	feature-number-of-drivers	2
feature-high-and-low-sides-dependency		feature-type	IGBT\|MOSFET\|SiCFET
feature-maximum-rise-time-ns	16	feature-maximum-fall-time-ns	12
feature-maximum-operating-frequency-khz		feature-maximum-propagation-delay-time-ns	30
feature-minimum-operating-supply-voltage-v	3	feature-maximum-operating-supply-voltage-v	18
feature-typical-input-low-threshold-voltage-v	1	feature-typical-input-high-threshold-voltage-v	1.8
feature-peak-output-current-a	6(Typ)	feature-maximum-power-dissipation-mw	1810
feature-packaging	Tube	feature-rad-hard
feature-pin-count	14	feature-cecc-qualified
feature-esd-protection	Yes	feature-escc-qualified
feature-military	No	feature-aec-qualified	Yes
feature-aec-qualified-number		feature-eccn-code	EAR99
feature-svhc	No	feature-svhc-exceeds-threshold	No