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UF3C065030K4S

N-Channel 650 V 85A (Tc) 441W (Tc) Through Hole TO-247-4

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UF3C065030K4S General Description

N-Channel 650 V 85A (Tc) 441W (Tc) Through Hole TO-247-4

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Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 85 A Rds On - Drain-Source Resistance 35 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 51 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 441 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename SiC FET Series UF3C
Configuration Single Fall Time 12 ns
Product Type MOSFET Rise Time 31 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 48 ns
Typical Turn-On Delay Time 25 ns Unit Weight 0.211644 oz

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