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See Technical Specifications

UPD44325364BF5-E40-FQ1-A

QDRII/DDRII/ QDRII+/DDRII+ SRAM

Manufacturer:

Renesas Electronics Corporation
Mfr.Part #:

UPD44325364BF5-E40-FQ1-A
Datasheet:

UPD44325364BF5-E40-FQ1-A Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
Technology:

SRAM - Synchronous, QDR II
EDA/CAD Models:

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Email: [email protected]

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UPD44325364BF5-E40-FQ1-A General Description

Support is limited to customers who have already adopted these products.

DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read cycles, thus the data is written or read twice every clock cycle. This provides for a significantly higher transfer rate than standard synchronous SRAM devices. In applications that require continuous read/write capability such as in look-up tables for network switches and routers, DDR SRAMs are an ideal solution. QDR SRAMs can provide double data rate (DDR) operation on each data pin through independently operated read and write ports, and can transfer four words of data on one clock cycle. This allows for bus contention to be virtually eliminated between the memory controller and the SRAM. The QDR SRAMs can support high end network switches, routers and other communication solutions. 。

Specifications

Series	-	Programmabe	Not Verified
Memory Type	Volatile	Memory Format	SRAM
Technology	SRAM - Synchronous, QDR II	Memory Size	36Mbit
Memory Organization	1M x 36	Memory Interface	Parallel
Clock Frequency	250 MHz	Write Cycle Time - Word, Page	4ns
Voltage - Supply	1.7V ~ 1.9V	Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount	Base Product Number	UPD44325364