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See Technical Specifications

VP0106N3-G +BOM

MOSFET, P-Channel Enhancement-Mode, -60V, 8.0 Ohm.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

VP0106N3-G
Datasheet:

VP0106N3-G Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

250mA (Tj)
EDA/CAD Models:

Request Free CAD Models for VP0106N3-G

Email: [email protected]

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Tel: +852 95804164

VP0106N3-G General Description

The VP0106N3-G transcends traditional transistor technology with its forward-thinking design and dynamic capabilities. By harnessing the power of a vertical DMOS structure and a state-of-the-art silicon-gate manufacturing process, this transistor embodies the perfect fusion of power, efficiency, and reliability. From its superior power handling to its impressive thermal stability, the VP0106N3-G is poised to revolutionize your electronic projects and ensure seamless operation in demanding environments

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Microchip Technology, Inc Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	1W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	VP0106
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	250 mA
Rds On - Drain-Source Resistance	8 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	4 ns
Forward Transconductance - Min	150 mS	Height	5.33 mm
Length	5.21 mm	Product Type	MOSFET
Rise Time	5 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	FET	Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	4 ns	Width	4.19 mm
Unit Weight	0.016000 oz