This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our
Privacy Policy.
All Results for "SI2" ( 268 )
Popular Manufacturers
- Part Number
- Manufacturers
- Description
- Datasheet
- Operation
- SI2319DS-T1-E3
- Vishay
- 0.082 ohm on-resistance and 0.75W power dissipation capability
- Datasheet
- SI2337DS-T1-GE3
- Vishay Siliconix
- P-Channel 80 V (D-S) MOSFET
- Datasheet
- SI2333DS-T1-E3
- Vishay
- The SI2333DS-T1-E3 is a semiconductor device that operates at a voltage level of 12V and can handle currents up to 5.3A
- Datasheet
- SI2325DS-T1-GE3
- VISHAY
- MOSFET -150V Vds 20V Vgs SOT-23
- Datasheet
- SI2312CDS-T1-GE3
- VISHAY
- Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
- Datasheet
- SI2347DS-T1-GE3
- Vishay
- -30V P-MOSFET transistor with unipolar operation and -5A current rating, featuring peak current handling up to -20A and power dissipation of 1
- Datasheet
- SI2301CDS-T1-GE3
- Vishay
- SI2301CDS-T1-GE3 is a P Channel MOSFET with a maximum voltage of 20V and maximum current of 3.1A
- Datasheet
- SI2399DS-T1-GE3
- Vishay
- Field-effect transistor in a SOT-23 housing, capable of handling up to -20V across the drain-source and 12V across the gate-source
- Datasheet
- SI2328DS-T1-GE3
- VISHAY
- N-Channel 100 V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)
- Datasheet
- SI2319CDS-T1-GE3
- Vishay
- Field-Effect Transistor suitable for Small Signal Amplification with P-Channel Configuration
- Datasheet
- SI2308BDS-T1-GE3
- Vishay
- The SI2308BDS-T1-GE3 is a SOT-23 packaged N-channel MOSFET with a 60V voltage rating and a 1.9A current capacity
- Datasheet
- SI2308BDS-T1-E3
- Vishay
- Low on-resistance of 156mΩ at 10V
- Datasheet
- SI2328DS-T1-E3
- Vishay
- SOT-23 Single N-Channel Power Mosfet with 100 V Rating and 0.25 Ohms Resistance
- Datasheet
- SI2305CDS-T1-GE3
- Vishay
- High Current Capability, Low Voltage Operation
- Datasheet
- SI2309DS-T1-E3
- VISHAY
- MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W
- Datasheet
- SI2343CDS-T1-GE3
- Vishay
- The product SI2343CDS-T1-GE3 is a P-channel MOSFET rated for 30 volts
- Datasheet
- SI2371EDS-T1-GE3
- VISHAY
- Single P-Channel 30 V 0.045 O 35 nC Surface Mount Power Mosfet - SOT-23
- Datasheet