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2N6668 +BOM

The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.

2N6668 General Description

The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.

Key Features

  • High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc
  • Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic

Specifications

Status Obsolete Case Outline 221A-09
MSL Temp (°C) 0 Container Type TUBE
Product Category Darlington Transistors Configuration Single
Transistor Polarity PNP Collector- Emitter Voltage VCEO Max 80 V
Emitter- Base Voltage VEBO 5 V Collector- Base Voltage VCBO 80 V
Maximum DC Collector Current 10 A Pd - Power Dissipation 65 W
Mounting Style Through Hole Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Continuous Collector Current 10 A
DC Collector/Base Gain hfe Min 100, 1000 Height 9.28 mm
Length 10.28 mm Product Type Darlington Transistors
Factory Pack Quantity 50 Subcategory Transistors
Width 4.82 mm Unit Weight 0.211644 oz

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Ratings and Reviews

More
J
J**e 01/07/2024

All is excellent, matches the description, to buy recommend.

4
M
M**i 12/23/2023

Paolo is a very honest guy and good business partner.

17
B
B**n 09/04/2023

Good described item, fast shipping. Thakn you.

2
E
E**h 10/25/2021

Thanks. Arrived safe.

15

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2N6668 Datasheet PDF

Preliminary Specification 2N6668 PDF Download

2N6668 PDF Preview

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