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2SK170-V +BOM

N-Channel Silicon Transistor in TO-92 Package

Manufacturer:

Toshiba
Mfr.Part #:

2SK170-V
Datasheet:

2SK170-V Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
Material:

Si
EDA/CAD Models:

Request Free CAD Models for 2SK170-V

2SK170-V General Description

Low Noise Audio Amplifier Applications• Recommended for first stages of EQ and M.C. head amplifiers.• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)• High breakdown voltage: VGDS = −40 V• Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)

Toshiba Inventory

Toshiba Original Stock

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
Material	Si	Channel Type	N
Configuration	Single	Maximum Drain Gate Voltage (V)	-40
Maximum Power Dissipation (mW)	400	Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	125	Minimum Drain Saturation Current (mA)	10
Mounting	Through Hole	PCB changed	3
Pin Count	3

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2SK170-V

Toshiba

Availability: 7,952 PCS

TO-92

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