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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-3
QFN3Manufacturer:
MITSUBISHI ELECTRIC CORP
Mfr.Part #:
2SK2975
Datasheet:
Channel Type:
N-Channel
Drain-to-Source Voltage (Vdss):
100V
Current - Continuous Drain (Id):
1.3A
Rds On (Max) @ Id, Vgs:
1.3 Ohm @ 300mA, 10V
EDA/CAD Models:
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-3
Product Name | 2SK2975 | Product Type | MOSFET |
Channel Type | N-Channel | Drain-to-Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) | 1.3A | Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 300mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V | Power - Max | 900mW |
Operating Temperature | -55°C ~ 150°C | Mounting Type | Through Hole |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
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The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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I was amazed by Avaq's swift delivery of my 2SK2975 components. Their commitment to timely service is remarkable, and I would wholeheartedly recommend them for their excellent delivery speed.