This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

A2I09VD030GNR1 +BOM

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 575-1300 MHz, 4 W AVG., 48 V

Manufacturer:

NXP
Mfr.Part #:

A2I09VD030GNR1
Datasheet:

A2I09VD030GNR1 Datasheet (PDF)
Mounting Style:

SMD/SMT
Type:

Power Amplifiers
Technology:

Si
Operating Frequency:

575 MHz to 1.3 GHz
EDA/CAD Models:

Request Free CAD Models for A2I09VD030GNR1

Avaq Semiconductor offers the highly versatile and reliable A2I09VD030GNR1 driver, produced by NXP. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the A2I09VD030GNR1.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	RF Amplifier	Mounting Style	SMD/SMT
Type	Power Amplifiers	Technology	Si
Operating Frequency	575 MHz to 1.3 GHz	P1dB - Compression Point	43.8 dBm
Gain	34.3 dB	Operating Supply Voltage	48 V to 55 V
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 150 C
Series	A2I09VD030	Number of Channels	2 Channel
Product Type	RF Amplifier	Factory Pack Quantity	500
Subcategory	Wireless & RF Integrated Circuits	Test Frequency	920 MHz to 960 MHz
Part # Aliases	935337252528	Unit Weight	0.056385 oz