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RF MOSFET Transistors 700W 1030-1090MHz
NI-780S-4LManufacturer:
Mfr.Part #:
AFV10700HSR5
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
2.6 A
Vds - Drain-Source Breakdown Voltage:
105 V
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RF Mosfet 50 V 100 mA 1.03GHz ~ 1.09GHz 19.2dB 770W NI-780S-4L
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 2.6 A |
Vds - Drain-Source Breakdown Voltage | 105 V | Operating Frequency | 1.03 GHz to 1.09 GHz |
Gain | 19.2 dB | Output Power | 700 W |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT | Number of Channels | 2 Channel |
Pd - Power Dissipation | 526 W | Product Type | RF MOSFET Transistors |
Series | AFV10700 | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Transistor Type | LDMOS FET |
Type | RF Power MOSFET | Vgs - Gate-Source Voltage | + 10 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V | Part # Aliases | 935346524178 |
Unit Weight | 0.228922 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1,148.126 | $1,148.13 |
200+ | $444.311 | $88,862.20 |
500+ | $428.697 | $214,348.50 |
1000+ | $420.980 | $420,980.00 |
The prices below are for reference only.