This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ALD1115PAL +BOM

Precision power switching devices ideal for high-speed data transmission systems, providing fast switching times and low on-resistance

Manufacturer:

Advanced Linear Devices Inc.
Mfr.Part #:

ALD1115PAL
Datasheet:

ALD1115PAL Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel Complementary
Drain To Source Voltage (Vdss):

10.6V
Rds On (Max) @ Id, Vgs:

1800Ohm @ 5V
EDA/CAD Models:

Request Free CAD Models for ALD1115PAL

ALD1115PAL General Description

Featuring a plastic encapsulation, the ALD1115PAL is suitable for a wide range of operating conditions, making it ideal for diverse circuit designs. The PAL package style offers easy installation and compatibility with standard soldering techniques. The DIP-8 configuration provides a compact form factor, enabling space-efficient PCB layouts

Key Features

Thermal tracking between N-channel and P-channel
Low threshold voltage of 0.7V for both N-channel and P-channel MOSFETs
Low input capacitance
High input impedance -- 10
Ω typical
Low input and output leakage currents
Negative current (IDS) temperature coefficient
Enhancement mode (normally off)
DC current gain 10
Single N-channel MOSFET and single P-channel MOSFET in one package

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel Complementary
Drain to Source Voltage (Vdss)	10.6V	Rds On (Max) @ Id, Vgs	1800Ohm @ 5V
Vgs(th) (Max) @ Id	1V @ 1µA	Input Capacitance (Ciss) (Max) @ Vds	3pF @ 5V
Power - Max	500mW	Operating Temperature	0°C ~ 70°C (TJ)
Mounting Type	Through Hole	Base Product Number	ALD1115