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AOK40B65H2AL +BOM

This IGBT chip, identified as AOK40B65H2AL, provides a maximum power dissipation of 260 watts and is equipped with a 3-pin TO-247 package

Manufacturer:

Alpha And Omega Semiconductor
Mfr.Part #:

AOK40B65H2AL
Datasheet:

AOK40B65H2AL Datasheet (PDF)
ECCN (US):

EAR99
Channel Type:

N
Configuration:

Single
Maximum Gate Emitter Voltage (V):

±30
EDA/CAD Models:

Request Free CAD Models for AOK40B65H2AL

AOK40B65H2AL General Description

The AOK40B65H2AL silicon carbide Schottky diode is a top choice for designers looking to maximize efficiency and performance in their high-speed switching applications. With a robust voltage rating of 650V and a solid continuous forward current rating of 40A, this diode is well-equipped to handle the demands of power supplies, motor control systems, and inverters

Key Features

Power Electronic Components
Electronic Modules and Subsystems
High Voltage Rectifier Diodes
Efficient Power Conversion Systems
Rapidly Changing Energy Demands
Innovative Semiconductor Solutions

Application

Renewable energy systems
Electric vehicles (EVs) and hybrid electric vehicles (HEVs)
Power supplies for industrial equipment
Motor control and drives
Solar inverters and wind turbines

Specifications

ECCN (US)	EAR99	Part Status	Active
Channel Type	N	Configuration	Single
Maximum Gate Emitter Voltage (V)	±30	Maximum Collector-Emitter Voltage (V)	650
Typical Collector Emitter Saturation Voltage (V)	2.05	Maximum Continuous Collector Current (A)	80
Maximum Gate Emitter Leakage Current (uA)	0.1	Maximum Power Dissipation (mW)	260
Minimum Operating Temperature (°C)	-55	Maximum Operating Temperature (°C)	150
Packaging	Tube	Mounting	Through Hole
PCB changed	3	Tab	Tab
Pin Count	3