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APT10053LNR +BOM

Ideal for high-voltage, high-current applications requiring low on-resistanc

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APT10053LNR General Description

Power Field-Effect Transistor, 20A I(D), 1000V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Specifications

Part Life Cycle Code Obsolete ECCN Code EAR99
HTS Code 8541.29.00.95 Additional Feature AVALANCHE RATED
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V Drain Current-Max (Abs) (ID) 20 A
Drain Current-Max (ID) 20 A Drain-source On Resistance-Max 0.53 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 520 W
Power Dissipation-Max (Abs) 520 W Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb) Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Element Material SILICON

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