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BAS16-V-GS08 +BOM

Rectifier Diode, 1 Phase, 1 Element, 0.15A, 75V V(RRM), Silicon, TO-236AB

BAS16-V-GS08 General Description

The BAS16-V-GS08 diode stands out for its exceptional performance characteristics, making it a preferred choice for engineers working on cutting-edge electronic projects. Its small signal design ensures precise control in switching applications, while the low forward voltage drop minimizes power dissipation. The diode's fast reverse recovery time of 6ns contributes to efficient operation, reducing delays in critical circuit functions. With a maximum junction temperature of 150°C and rugged SMD termination, this diode is well-suited for demanding environments where reliability is paramount

Key Features

  • Silicon Epitaxial Planar Diode
  • Ultra fast switching speed
  • Surface mount package ideally suited for automatic insertion
  • High conductance
  • AEC-Q101 qualified
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Specifications

Product Category Diodes - General Purpose, Power, Switching Product Switching Diodes
Mounting Style SMD/SMT Peak Reverse Voltage 75 V
Max Surge Current 2 A If - Forward Current 150 mA
Configuration Single Recovery Time 6 ns
Vf - Forward Voltage 1.25 V Ir - Reverse Current 1 uA
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series BASxx Height 1.05 mm
Length 3.1 mm Product Type Diodes - General Purpose, Power, Switching
Factory Pack Quantity 3000 Subcategory Diodes & Rectifiers
Type Switching Diode Width 1.43 mm
Unit Weight 0.000282 oz

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