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See Technical Specifications

BAS386-TR +BOM

MicroMELF T/R package ensures reliable small signal switching

Manufacturer:

Vishay General Semiconductor - Diodes Division
Mfr.Part #:

BAS386-TR
Datasheet:

BAS386-TR Datasheet (PDF)
Technology:

Schottky
Voltage - DC Reverse (Vr) (Max):

50 V
Current - Average Rectified (Io):

200mA
Voltage - Forward (Vf) (Max) @ If:

900 mV @ 100 mA
EDA/CAD Models:

Request Free CAD Models for BAS386-TR

BAS386-TR General Description

The BAS386-TR is a single configuration diode with a peak average forward current (If(AV)) of 200mA and a maximum reverse repetitive voltage (Vrrm) of 50V. The forward voltage (Vf) is rated at 900mV, while the maximum reverse current is 5uA. With a capacitance of 8pF, this diode operates in a wide temperature range from -65°C to 125°C. It comes in a compact MicroMELF package with 2 pins for surface mount installation. The diode is supplied in tape & reel packaging and has a thermal resistance of 320K/W

Key Features

Integrated protection ring against static discharge,Very low forward voltage

Specifications

Technology	Schottky	Voltage - DC Reverse (Vr) (Max)	50 V
Current - Average Rectified (Io)	200mA	Voltage - Forward (Vf) (Max) @ If	900 mV @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed	Current - Reverse Leakage @ Vr	5 µA @ 40 V
Capacitance @ Vr, F	880pF @ 0V, 1MHz	Mounting Type	Surface Mount
Operating Temperature - Junction	125°C (Max)	Base Product Number	BAS386