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BFR840L3RHESDE6327XTSA1 +BOM

RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3

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BFR840L3RHESDE6327XTSA1 General Description

RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3

Infineon Technologies Corporation Inventory

Key Features

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 10 mA
  • High gain>>
  • Ideal for low voltage applications e.g.>
  • Low profile and small form factor leadless package
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 2.6V
Frequency - Transition 75GHz Noise Figure (dB Typ @ f) 0.5dB @ 450MHz
Gain 27dB Power - Max 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V Current - Collector (Ic) (Max) 35mA
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number BFR840 RHoS yes
PBFree yes HalogenFree yes

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BFR840L3RHESDE6327XTSA1 Datasheet PDF

Preliminary Specification BFR840L3RHESDE6327XTSA1 PDF Download

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