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See Technical Specifications

BLF178XR +BOM

RF MOSFET Transistor, N-Channel, 110V, SOT-539A, 5-Pin

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 μs with δ of 20 %:
Output power = 1400 W
Power gain = 28 dB
Efficiency = 72 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

ECCN (US)	EAR99	Part Status	NRND
Configuration	Dual Common Source	Channel Mode	Enhancement
Channel Type	N	Number of Elements per Chip	2
Mode of Operation	CW\|Pulsed RF	Process Technology	LDMOS
Maximum Drain Source Voltage (V)	110	Maximum Gate Source Voltage (V)	11
Maximum Gate Threshold Voltage (V)	2.25	Maximum VSWR	65(Min)
Maximum Gate Source Leakage Current (nA)	280	Maximum IDSS (uA)	2.8
Maximum Drain Source Resistance (mOhm)	70(Typ)@6V	Typical Input Capacitance @ Vds (pF)	414@50V
Typical Reverse Transfer Capacitance @ Vds (pF)	5.5@50V	Typical Output Capacitance @ Vds (pF)	184@50V
Output Power (W)	1400(Typ)	Typical Power Gain (dB)	23\|28
Maximum Frequency (MHz)	128	Minimum Frequency (MHz)	10
Typical Drain Efficiency (%)	72	Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200	Mounting	Screw
PCB changed	5	Pin Count	5