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Sensitive photodiode for m wavelength detecti
DIP/SOPManufacturer:
SIEMENS A G
Mfr.Part #:
BP103-3
Datasheet:
Part Life Cycle Code:
Obsolete
Additional Feature:
HIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Min:
50 V
Configuration:
SINGLE
EDA/CAD Models:
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Phototransistors 850nm Top View TO-206AA, TO-18-3 Metal Can
Part Life Cycle Code | Obsolete | Reach Compliance Code | |
Additional Feature | HIGH RELIABILITY | Coll-Emtr Bkdn Voltage-Min | 50 V |
Configuration | SINGLE | Dark Current-Max | 100 nA |
Infrared Range | YES | JESD-609 Code | e0 |
Light Current-Nom | 0.6 mA | Mounting Feature | THROUGH HOLE MOUNT |
Number of Functions | 1 | On-State Current-Max | 0.1 A |
Operating Temperature-Max | 80 °C | Operating Temperature-Min | -40 °C |
Optoelectronic Device Type | PHOTO TRANSISTOR | Peak Wavelength | 850 nm |
Power Dissipation-Max | 0.3 W | Response Time-Max | 0.000007 s |
Shape | ROUND | Size | 4.2 mm |
Surface Mount | NO | Terminal Finish | Tin/Lead (Sn/Pb) |
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