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See Technical Specifications

BSH111BKR +BOM

55 V, N-channel Trench MOSFET

Manufacturer:

Nexperia Semiconductor (NXP)
Mfr.Part #:

BSH111BKR
Datasheet:

BSH111BKR Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
Current - Continuous Drain (Id) @ 25°C:

210mA (Ta)
EDA/CAD Models:

Request Free CAD Models for BSH111BKR

BSH111BKR General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM

Nexperia Semiconductor (NXP) Original Stock

Application

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	Current - Continuous Drain (Id) @ 25°C	210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V	Rds On (Max) @ Id, Vgs	4Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	0.5 nC @ 4.5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 30 V
FET Feature	-	Power Dissipation (Max)	302mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BSH111	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-esd-protection
feature-escc-qualified		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	Yes
feature-svhc-exceeds-threshold	No