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BUK7Y19-100EX +BOM

N-channel 100 V, 19 mΩ standard level MOSFET in LFPAK56

Manufacturer:

Nexperia Semiconductor (NXP)
Mfr.Part #:

BUK7Y19-100EX
Datasheet:

BUK7Y19-100EX Datasheet (PDF)
Series:

Automotive, AEC-Q100
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V

BUK7Y19-100EX General Description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Key Features

Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

Nexperia Semiconductor (NXP) Original Stock

Application

12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q100
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-	Vgs (Max)	±20V
FET Feature	-	Power Dissipation (Max)	169W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BUK7Y19	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	5
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	Yes
feature-aec-qualified-number	AEC-Q101	feature-auto-motive	Yes
feature-p-pap		feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes