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CGHV60170D-GP4 +BOM

RF Mosfet 50 V 260 mA 6GHz 17dB 170W Die

Manufacturer:

Wolfspeed
Mfr.Part #:

CGHV60170D-GP4
Datasheet:

CGHV60170D-GP4 Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

6 GHz

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RF Mosfet 50 V 260 mA 6GHz 17dB 170W Die

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN
Operating Frequency	6 GHz	Gain	18 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	-	Id - Continuous Drain Current	12.6 A
Output Power	170 W	Maximum Drain Gate Voltage	-
Pd - Power Dissipation	-	Mounting Style	SMD/SMT
Application	-	Development Kit	-
Fall Time	-	Forward Transconductance - Min	-
Gate-Source Cutoff Voltage	-	Height	100 um
Length	5.4 mm	NF - Noise Figure	-
Number of Channels	8 Channel	Operating Temperature Range	-
P1dB - Compression Point	-	Product	GaN HEMTs
Product Type	RF JFET Transistors	Rds On - Drain-Source Resistance	-
Rise Time	-	Factory Pack Quantity	10
Subcategory	Transistors	Typical Turn-Off Delay Time	-
Vgs th - Gate-Source Threshold Voltage	-	Width	820 um