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See Technical Specifications

CLF1G0060-30U +BOM

N-Channel Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with 150V Voltage Rating in CDFM Package

Manufacturer:

AMPLEON NETHERLANDS B V
Mfr.Part #:

CLF1G0060-30U
Datasheet:

CLF1G0060-30U Datasheet (PDF)
Part Life Cycle Code:

Contact Manufacturer
ECCN Code:

EAR99
Case Connection:

SOURCE
Configuration:

SINGLE
EDA/CAD Models:

Request Free CAD Models for CLF1G0060-30U

Avaq Semiconductor offers the highly versatile and reliable CLF1G0060-30U driver, produced by AMPLEON NETHERLANDS B V. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the CLF1G0060-30U.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code	Contact Manufacturer	Reach Compliance Code
ECCN Code	EAR99	Case Connection	SOURCE
Configuration	SINGLE	DS Breakdown Voltage-Min	150 V
FET Technology	HIGH ELECTRON MOBILITY	Highest Frequency Band	C BAND
JESD-30 Code	R-CDFM-F2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	DEPLETION MODE	Peak Reflow Temperature (Cel)	245
Polarity/Channel Type	N-CHANNEL	Reference Standard	IEC-60134
Surface Mount	YES	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	AMPLIFIER	Transistor Element Material	GALLIUM NITRIDE