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See Technical Specifications

CSD17313Q2T +BOM

N-Channel 30 V 5A (Ta) 2.4W (Ta), 17W (Tc) Surface Mount 6-WSON (2x2)

Manufacturer:

Texas Instruments, Inc
Mfr.Part #:

CSD17313Q2T
Datasheet:

CSD17313Q2T Datasheet (PDF)
Series:

NexFET™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for CSD17313Q2T

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CSD17313Q2T General Description

The CSD17313Q2T is a high-performance 30-V, 24-mΩ power MOSFET, specifically engineered to reduce power losses in various conversion applications. With its compact 2-mm × 2-mm SON package, this NexFET™ MOSFET delivers outstanding thermal management capabilities while being optimized for 5-V gate drive operations. Ideal for compact designs that require efficient power delivery, this MOSFET stands out for its superior performance and reliability

Key Features

Dual-Sided Pads for Board Mounting
Stainless Steel Leadframe
Ceramic-Encapsulated Terminal

Low Insertion Loss
High Return Loss
Precise Frequency Control

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	NexFET™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V	Rds On (Max) @ Id, Vgs	30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id	1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 4.5 V
Vgs (Max)	+10V, -8V	Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	2.4W (Ta), 17W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	CSD17313	VDS (V)	30
Configuration	Single	Rds(on) at VGS=4.5 V (max) (mΩ)	32
IDM - pulsed drain current (max) (A)	20	QG (typ) (nC)	2.1
QGD (typ) (nC)	0.4	QGS (typ) (nC)	0.7
VGS (V)	10	VGSTH typ (typ) (V)	1.3
ID - silicon limited at TC=25°C (A)	19	Logic level	Yes
Operating temperature range (°C)	-55 to 150	Rating	Catalog
Pin Count	8	Released Date	Jul 28, 2019
Last Modified Date	Mar 7, 2023 4:10 PM UTC